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2019•Journal of Nanoscience and NanotechnologyRequires access

Resistive Switching Mechanism of HfO2 Based Resistance Random Access Memory Devices with Different Electrode Materials

Chao Sun, Songhe Lu, Fang Jin, Wenqin Mo, Junlei Song, Kaifeng Dong

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Abstract

This study investigated the impact of electrode materials on HfO₂-based RRAM devices. The research includes three types of electrode materials: (1) the electrodes with strong ability of oxygen reservoirs; (2) the electrode with poor ability of oxygen reservoirs; (3) the active electrode with injection ability. Through implementing different combinations of electrodes, three types of switching modes were obtained and the relative conduction mechanism was analyzed, as well as conduction model. Those studies may offer ways of using electrodes to control the resistive switching processes and fabricating the RRAM devices with good performance.

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What this paper is about

This study investigated the impact of electrode materials on HfO₂-based RRAM devices. The research includes three types of electrode materials: (1) the electrodes with strong ability of oxygen reservoirs; (2) the electrode with poor ability of oxygen reservoirs; (3) the active electrode with injection ability. Through implementing different combinations of electrodes, three types of switching modes were obtained and the relative conduction mechanism was analyzed, as well as conduction model. Those studies may offer ways of using electrodes to control the resistive switching processes and fabricating the RRAM devices with good performance.

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Available abstract

This study investigated the impact of electrode materials on HfO₂-based RRAM devices. The research includes three types of electrode materials: (1) the electrodes with strong ability of oxygen reservoirs; (2) the electrode with poor ability of oxygen reservoirs; (3) the active electrode with injection ability. Through implementing different combinations of electrodes, three types of switching modes were obtained and the relative conduction mechanism was analyzed, as well as conduction model. Those studies may offer ways of using electrodes to control the resistive switching processes and fabricating the RRAM devices with good performance.

Key concepts: Materials science, Resistive random-access memory, Electrode, Mechanism (biology), Optoelectronics, Resistive touchscreen, Random access memory, Non-volatile memory

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