2019Unpublished venueRequires access

Study on role of inserted Pt intermediate layer deposited by atomic layer deposition for Cu-Cu quasi-direct bonding

Kosuke Yamada, Hiroyuki Kuwae, Takumi Kamibayashi, Shuichi Shoji, Wataru Momose, Jun Mizuno

Open publisher page 1 citations

Abstract

Recently, we developed Cu-Cu quasi-direct bonding with Pt intermediate layer deposited by atomic layer deposition (ALD). In this report, we study about a role of inserted Pt layer deposited by ALD. The improvement of bonding strength by quasi direct bonding was explained by two kinds of mechanisms.

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What this paper is about

Recently, we developed Cu-Cu quasi-direct bonding with Pt intermediate layer deposited by atomic layer deposition (ALD). In this report, we study about a role of inserted Pt layer deposited by ALD. The improvement of bonding strength by quasi direct bonding was explained by two kinds of mechanisms.

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Available abstract

Recently, we developed Cu-Cu quasi-direct bonding with Pt intermediate layer deposited by atomic layer deposition (ALD). In this report, we study about a role of inserted Pt layer deposited by ALD. The improvement of bonding strength by quasi direct bonding was explained by two kinds of mechanisms.

Key concepts: Atomic layer deposition, Layer (electronics), Deposition (geology), Direct bonding, Materials science, Bonding strength, Layer by layer, Bond strength

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