2019•Unpublished venueRequires access

Spectroscopic Assessment of Charge Mobility in Organic Semiconductors

Andrey Yu. Sosorev, Dmitry R. Maslennikov, Elizaveta V. Feldman, Vladimir V. Bruevich, Ivan Yu. Chernyshov, Mikhail V. Vener, Oleg V. Borshchev, Г. Г. Абашев, Sergey Anatol'evich Ponomarenko, Dmitry Yu. Paraschuk

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Abstract

Rapid progress in organic electronics demands new highly efficient organic semiconducting materials. Nevertheless, only few materials have been created so far that show reliable band-like transport with high charge mobilities, which reflects the two main obstacles in the field: the poor understanding of charge transport in organic semiconductors (OSs) and the difficulty of its quantification in devices. Here, we present a spectroscopic method for assessment of the charge transport in organic semiconductors. We show that the intensities of the low-frequency Raman spectrum allow calculation of the dynamic disorder that limits the charge carrier mobility. The spectroscopically evaluated mobility clearly correlates with the device charge mobility reported for various OSs. The proposed spectroscopic method can serve as a powerful tool for a focused search of new materials and highlights the disorder bottleneck in the intrinsic charge transport in high-mobility organic semiconductors.

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What this paper is about

Rapid progress in organic electronics demands new highly efficient organic semiconducting materials. Nevertheless, only few materials have been created so far that show reliable band-like transport with high charge mobilities, which reflects the two main obstacles in the field: the poor understanding of charge transport in organic semiconductors (OSs) and the difficulty of its quantification in devices. Here, we present a spectroscopic method for assessment of the charge transport in organic semiconductors. We show that the intensities of the low-frequency Raman spectrum allow calculation of the dynamic disorder that limits the charge carrier mobility. The spectroscopically evaluated mobility clearly correlates with the device charge mobility reported for various OSs. The proposed spectroscopic method can serve as a powerful tool for a focused search of new materials and highlights the disorder bottleneck in the intrinsic charge transport in high-mobility organic semiconductors.

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Available abstract

Rapid progress in organic electronics demands new highly efficient organic semiconducting materials. Nevertheless, only few materials have been created so far that show reliable band-like transport with high charge mobilities, which reflects the two main obstacles in the field: the poor understanding of charge transport in organic semiconductors (OSs) and the difficulty of its quantification in devices. Here, we present a spectroscopic method for assessment of the charge transport in organic semiconductors. We show that the intensities of the low-frequency Raman spectrum allow calculation of the dynamic disorder that limits the charge carrier mobility. The spectroscopically evaluated mobility clearly correlates with the device charge mobility reported for various OSs. The proposed spectroscopic method can serve as a powerful tool for a focused search of new materials and highlights the disorder bottleneck in the intrinsic charge transport in high-mobility organic semiconductors.

Key concepts: Organic semiconductor, Semiconductor, Charge (physics), Materials science, Optoelectronics, Electron mobility, Engineering physics, Computer science

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