Ultra-low temperature anodic bonding of silicon and borosilicate glass

Abstract Ultra-low temperature anodic bonding of silicon and borosilicate glass has been described for the first time. The article gives the arguments why the issue of non-standard anodic bonding of silicon and glass is important. Some examples of solutions were indicated, in which the development of a new anodic bonding method was crucial for the development of the final solution. A series of experiments were carried out, the effect of which was the obtaining of a permanent connection of silicon and glass at a temperature of 120 °C. Optimal conditions of the ultra-low temperature of the anodic bonding process were given. The bonding force was tested, which was more than 1.5 MPa.