Influence of annealing temperature on reversible resistive switching of WOx thin filmsdeposited on FTO substrate

In this work, we investigated effects of the annealing temperature on the crystalline, morphology of sputtered WOx thin films. The resutls show that as-deposited WOx thin films and annealed WOxthin films at 300oC, 600oC in the air are in monoclinic phase. As the annealing temperature increases, crystallinity of WOx thin films enhances with high(200) orientation. FESEM images showed larger grain size, and denser films at high annealing temperatures. The reversible resistance switching characteristics of the Ag/WOx/FTO structure follows bipolar type, the switching ratio decreases as the crystallinity of WOx thin films increases under an the annealing treatment.