2018•Unpublished venueRequires access
A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors
Pavlo Sai, Dmytro B. But, Krzesimir Nowakowski-Szkudlarek, J. Przybytek, Pawel Prystawko, I. Yahniuk, Piotr Wiśniewski, Bartłomiej Stonio, Mateusz Słowikowski, Sergey Rumyantsev, W. Knap, G. Cywiński
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Abstract
We report on comparison studies between a novel transistor like device and two dimensional Fin Field-Effect transistor towards their applications in a terahertz resonant detector. Both device structures have been fabricated on the same wafer of GaN/AIGaN epistructure during one processing run. The proposed here the transistor-like structure has two side Schottky gates, which can be biased towards complete pinch-off the 2DEG channel in this device. At certain conditions, near to pinch-off region, it is possible to obtain one dimensional current flow. This feature is especially attractive for THz resonant detector approach, which will be discussed in details.