Three Terminal Skyrmion Device for Memory Applications
Wei Liang Gan, Hiu Tung Fook, Wen Siang Lew
Abstract
Wei Liang Gan, Hiu Tung Fook, Wen Siang Lew
Abstract
Magnetic skyrmions possess great potential as data carriers due to their particle-like behavior that enables an additional dimension for manipulation1. However, the only skyrmion memory architecture demonstrated thus far is that of a 1D skyrmion racetrack memory in which the skyrmions were shown to move at lackluster speeds1,2. In this work, we propose a three terminal device that utilizes the extra dimension to effectively inject, delete and store skyrmions. With the addition of an extra branch, the skyrmions are injected in-line in 170 ps with an average current density of 3.8×1011p Am-2, as opposed to the tens of nanoseconds required for the magnetic field-based iniection methods2.
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Magnetic skyrmions possess great potential as data carriers due to their particle-like behavior that enables an additional dimension for manipulation1. However, the only skyrmion memory architecture demonstrated thus far is that of a 1D skyrmion racetrack memory in which the skyrmions were shown to move at lackluster speeds1,2. In this work, we propose a three terminal device that utilizes the extra dimension to effectively inject, delete and store skyrmions. With the addition of an extra branch, the skyrmions are injected in-line in 170 ps with an average current density of 3.8×1011p Am-2, as opposed to the tens of nanoseconds required for the magnetic field-based iniection methods2.
Key concepts: Skyrmion, Dimension (graph theory), Physics, Topology (electrical circuits), Computer science, Particle physics, Combinatorics, Mathematics