GaN-nanowire as probe for scanning tunneling microscopy
Saber Samadi
Abstract
Open-access reader
Saber Samadi
Abstract
Open-access reader
Scanning tunneling microscope (STM) has in recent years been one of the most used microscopy approaches in surface science. The STM probe allows for the investigation of atomic resolution electrical properties of a material, these probes are usually of metallic characters. In this project, efforts have been made to investigate how good semi-conducting materials are as scanning probes. GaN-nanowires are used as probes for scanning tunneling microscopy, where a single GaN-nanowire was positioned on top of a tungsten tip, using a nanowire manipulator.
A significance statement is not available in the OpenAlex record.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
Scanning tunneling microscope (STM) has in recent years been one of the most used microscopy approaches in surface science. The STM probe allows for the investigation of atomic resolution electrical properties of a material, these probes are usually of metallic characters. In this project, efforts have been made to investigate how good semi-conducting materials are as scanning probes. GaN-nanowires are used as probes for scanning tunneling microscopy, where a single GaN-nanowire was positioned on top of a tungsten tip, using a nanowire manipulator.
Key concepts: Scanning tunneling microscope, Nanowire, Scanning probe microscopy, Materials science, Scanning ion-conductance microscopy, Nanotechnology, Electrochemical scanning tunneling microscope, Scanning tunneling spectroscopy