2018•Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenaRequires access
Low-Temperature Sintering of Porous Silicon Carbide Ceramics with H3PO4 as an Additive
Tian Feng Gu, Fei Chen, Hailong Yuan, Qiang Shen, Lian Meng Zhang
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Abstract
In this paper, the raw SiC powder is oxidized at high temperature (1000 °C for 4h), and a layer of SiO2oxide film is formed on the surface of SiC particles. By adding phosphoric acid, phosphoric acid reacts with SiO2at lower temperatures to form phosphate. Phosphate decomposition produces gas to create pores. At 1200 °C, the phosphate is completely decomposed into SiO2, and a large amount of gas is produced to prepare porous SiC ceramic with high porosity and high strength. The effects of H3PO4content on the phase composition, microstructure, porosity and mechanical properties of the prepared porous SiC ceramic were investigated. With the increase of H3PO4content, the porosity increased and the bending strength decreased. The results suggest that at the sintering temperature of 1200 °C, the porosity of the samples can reach 58.3%~71.2%, while the bending strength of them can reach 8.72~31.09 MPa.