2007•Journal of SemiconductorsRequires access

J-V Characteristics of Cu(In1-xGax)Se2 Thin Film Solar Cells

He Weiyu, Sun Jin Yun, Qiao Zai-xiang, Ao Jianping, Xinglei Wang, LI Chang-jian

Abstract

J-V characteristics of Cu(In1-xGax)Se2 (CIGS) thin film solar cells are measured and analyzed.The diode saturation current density J0,diode quality factor A,series resistance Rs and shunt resistance rsh are deduced using Matlab.The calculated results coincide with the measurement very well.A CIGS cell produced in our laboratories is characterized at different illumination intensities.The calculated characteristic parameters are plotted with the irradiance.The shunt resistance rsh decreases as illumination increases.The increased shunt resistance is most likely one of the reasons for the better performance of CIGS solar cells under week illumination.

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Key concepts: Copper indium gallium selenide solar cells, Saturation current, Equivalent series resistance, Materials science, Diode, Optoelectronics, Solar cell, Thin film solar cell