2017•IEICE Technical Report; IEICE Tech. Rep.Requires access

Two-step crystal growth of GaN nanowire by MOCVD

Kohei Sasai, Myung‐Hee Y. Kim, A Suzuki, Hiroki Sibuya, Yuki Kurisaki, Kyohei Nokimura, Minoru Takebayasi, Satosi Kamiyama, Tetuya Takeuchi, Motoaki Iwaya, Isamu Akasaki

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Key concepts: Metalorganic vapour phase epitaxy, Nanowire, Materials science, Crystal (programming language), Gallium nitride, Optoelectronics, Crystal growth, Nanotechnology

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Two-step crystal growth of GaN nanowire by MOCVD — Research Paper | ScholarLens