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Determination of the recombination parameters and the depth of the p-n junction in semiconductor photocells

M. B. Kagan, T.L. Lyubashevskaya

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Key concepts: Photoresistor, Semiconductor, Recombination, Optoelectronics, Semiconductor materials, p–n junction, Optics, Physics

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Determination of the recombination parameters and the depth of the p-n junction in semiconductor photocells — Research Paper | ScholarLens