Effects of permanent and recoverable component of NBTI mechanisms on flip flop circuits designed using planar MOSFET and FinFET

Negative Bias Temperature Instability has causes a negative impact to a circuit performance due to the NBTI-induced positive charges that causes a shifts in threshold voltage. However, the impact of NBTI mechanism on a new FinFET devices compare to a conventional planar MOSFET devices are currently not well-understood. Not only that, a circuit reliability study related to NBTI effect on different defect mechanism has not yet been studied extensively. In this work, a numerical simulation based on interface traps and oxide traps is used on both MOSFET and FinFET devices by using MOSRA model. The results shown that FinFET model is degraded due to NBTI compared to MOSFET device. However, the circuit delay and the power consumption of FinFET device has better performance compared to MOSFET device.