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2018•Unpublished venueRequires access

Spin transfer torque magnetic random-access memory: Towards sub-10 nm devices

Nicolas Perrissin, Steven Lequeux, N. Strelkov, L. Vila, Liliana Daniela Buda-Prejbeanu, S. Auffret, Ricardo C. Sousa, Lucian Prejbeanu, B. Diény

Open publisher page 3 citations

Abstract

We present a new approach to increase the downsize scalability of perpendicular STT-MRAM. It is achieved by increasing the thickness of the free layer in order to induce a perpendicular shape anisotropy (PSA). Therefore, in PSA-STT-MRAM, the perpendicular anisotropy mainly arises from the shape of the storage layer and no longer from an interfacial anisotropy with the tunnel barrier. This approach allows to easily tune the stability of the memory point just by changing the aspect ratio (thickness / diameter) of the storage layer. The paper is mainly focused on presenting the theory of PSA-MRAM and briefly discusses practical realizations of such devices.

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What this paper is about

We present a new approach to increase the downsize scalability of perpendicular STT-MRAM. It is achieved by increasing the thickness of the free layer in order to induce a perpendicular shape anisotropy (PSA). Therefore, in PSA-STT-MRAM, the perpendicular anisotropy mainly arises from the shape of the storage layer and no longer from an interfacial anisotropy with the tunnel barrier. This approach allows to easily tune the stability of the memory point just by changing the aspect ratio (thickness / diameter) of the storage layer. The paper is mainly focused on presenting the theory of PSA-MRAM and briefly discusses practical realizations of such devices.

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Available abstract

We present a new approach to increase the downsize scalability of perpendicular STT-MRAM. It is achieved by increasing the thickness of the free layer in order to induce a perpendicular shape anisotropy (PSA). Therefore, in PSA-STT-MRAM, the perpendicular anisotropy mainly arises from the shape of the storage layer and no longer from an interfacial anisotropy with the tunnel barrier. This approach allows to easily tune the stability of the memory point just by changing the aspect ratio (thickness / diameter) of the storage layer. The paper is mainly focused on presenting the theory of PSA-MRAM and briefly discusses practical realizations of such devices.

Key concepts: Magnetoresistive random-access memory, Spin-transfer torque, Perpendicular, Anisotropy, Materials science, Magnetic storage, Torque, Layer (electronics)

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