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2017•ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam)Open access

IV Characteristics of a Stabilized Resonant Tunnelling Diodes

Andrei Cornescu, Jue Wang, Abdullah Al‐Khalidi, Razvan Morariu, Edward Wasige

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Abstract

The presence of parasitic oscillations found in the negative differential region (NDR), which can distort the current-voltage (I-V) characteristics of the device is one of the main problems when designing resonant tunnelling diode (RTD) circuits. A new method for RTD stabilization is proposed based on work done previously on tunnel diodes and results show that there is a significant difference between the I-V characteristics of a tunnel diode and that of an RTD. This work shows promising potential for further increasing the RTD’s output power, DC-RF conversion efficiency and provides the basis for an accurate model of the NDR region

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The presence of parasitic oscillations found in the negative differential region (NDR), which can distort the current-voltage (I-V) characteristics of the device is one of the main problems when designing resonant tunnelling diode (RTD) circuits. A new method for RTD stabilization is proposed based on work done previously on tunnel diodes and results show that there is a significant difference between the I-V characteristics of a tunnel diode and that of an RTD. This work shows promising potential for further increasing the RTD’s output power, DC-RF conversion efficiency and provides the basis for an accurate model of the NDR region

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Available abstract

The presence of parasitic oscillations found in the negative differential region (NDR), which can distort the current-voltage (I-V) characteristics of the device is one of the main problems when designing resonant tunnelling diode (RTD) circuits. A new method for RTD stabilization is proposed based on work done previously on tunnel diodes and results show that there is a significant difference between the I-V characteristics of a tunnel diode and that of an RTD. This work shows promising potential for further increasing the RTD’s output power, DC-RF conversion efficiency and provides the basis for an accurate model of the NDR region

Key concepts: Quantum tunnelling, Tunnel diode, Diode, Resonant-tunneling diode, Optoelectronics, Electrical engineering, Voltage, Electronic circuit

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