ScholarLens Back to search
2017•JSTS Journal of Semiconductor Technology and ScienceRequires access

A Sub-1V Full CMOS Bandgap Voltage Reference with a Body Bias

Chang-Bum Park, Kyung-Chan An, Shin-Il Lim

Open publisher page 2 citations

Abstract

In this paper, a low-power sub-1V bandgap voltage reference(sub-BGR) without any resistors and BJTs is presented. To reduce process variations without bipolar junction transistors(BJTs), a weighted Vgs structure is modified with a body bias for the generation of both complementary-to-absolutetemperature(CTAT) voltage and proportional-toabsolute-temperature(PTAT) voltage. Moreover, the proposed sub-BGR is operated in subthreshold region to minimize the power consumption. The proposed sub-BGR is implemented with a 0.18 μm deep N-well (DNW) CMOS technology. The measured results show that the temperature variation of 55ppm/°C is obtained with a temperature range from -40°C to 80°C. The power supply rejection ratio(PSRR) of -44 dB at 100 Hz is achieved while consuming total power of 38 nW at the supply voltage of 0.8 V. Measured output reference voltage is 435 mV and the active area is 150 μm by 49 μm.

About this research paper

What this paper is about

In this paper, a low-power sub-1V bandgap voltage reference(sub-BGR) without any resistors and BJTs is presented. To reduce process variations without bipolar junction transistors(BJTs), a weighted Vgs structure is modified with a body bias for the generation of both complementary-to-absolutetemperature(CTAT) voltage and proportional-toabsolute-temperature(PTAT) voltage. Moreover, the proposed sub-BGR is operated in subthreshold region to minimize the power consumption. The proposed sub-BGR is implemented with a 0.18 μm deep N-well (DNW) CMOS technology. The measured results show that the temperature variation of 55ppm/°C is obtained with a temperature range from -40°C to 80°C. The power supply rejection ratio(PSRR) of -44 dB at 100 Hz is achieved while consuming total power of 38 nW at the supply voltage of 0.8 V. Measured output reference voltage is 435 mV and the active area is 150 μm by 49 μm.

Why it matters

OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

In this paper, a low-power sub-1V bandgap voltage reference(sub-BGR) without any resistors and BJTs is presented. To reduce process variations without bipolar junction transistors(BJTs), a weighted Vgs structure is modified with a body bias for the generation of both complementary-to-absolutetemperature(CTAT) voltage and proportional-toabsolute-temperature(PTAT) voltage. Moreover, the proposed sub-BGR is operated in subthreshold region to minimize the power consumption. The proposed sub-BGR is implemented with a 0.18 μm deep N-well (DNW) CMOS technology. The measured results show that the temperature variation of 55ppm/°C is obtained with a temperature range from -40°C to 80°C. The power supply rejection ratio(PSRR) of -44 dB at 100 Hz is achieved while consuming total power of 38 nW at the supply voltage of 0.8 V. Measured output reference voltage is 435 mV and the active area is 150 μm by 49 μm.

Key concepts: Bandgap voltage reference, Subthreshold conduction, Power supply rejection ratio, Voltage reference, CMOS, Resistor, Electrical engineering, Voltage

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
A Sub-1V Full CMOS Bandgap Voltage Reference with a Body Bias — Research Paper | ScholarLens