ScholarLens Back to search
2017•Unpublished venueRequires access

Evaluation and optimization of physical unclonable function (PUF) based on the variability of FinFET SRAM

Shen Zhang, Bin Gao, Dong Wu, Huaqiang Wu, He Qian

Open publisher page 5 citations

Abstract

FinFET variability, which is a small amplitude deviation caused by process, cannot be ignored with the scaling of CMOS. This work utilizes the variability as the random source of SRAM Physical Unclonable function (PUF). The impact of the variation has been simulated from device-level to circuit-level. Further research has been done with its influence on SRAM static noise margin (SNM) and SRAM PUF reliability, and the trade-off relation between them.

About this research paper

What this paper is about

FinFET variability, which is a small amplitude deviation caused by process, cannot be ignored with the scaling of CMOS. This work utilizes the variability as the random source of SRAM Physical Unclonable function (PUF). The impact of the variation has been simulated from device-level to circuit-level. Further research has been done with its influence on SRAM static noise margin (SNM) and SRAM PUF reliability, and the trade-off relation between them.

Why it matters

OpenAlex reports 5 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

FinFET variability, which is a small amplitude deviation caused by process, cannot be ignored with the scaling of CMOS. This work utilizes the variability as the random source of SRAM Physical Unclonable function (PUF). The impact of the variation has been simulated from device-level to circuit-level. Further research has been done with its influence on SRAM static noise margin (SNM) and SRAM PUF reliability, and the trade-off relation between them.

Key concepts: Static random-access memory, Physical unclonable function, Noise margin, Reliability (semiconductor), Process variation, Electronic engineering, Random access memory, CMOS

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Evaluation and optimization of physical unclonable function (PUF) based on the variability of FinFET SRAM — Research Paper | ScholarLens