2017•Glass Physics and ChemistryRequires access

Study of chemical bonds and element composition of silicon oxycarbonitride films by the methods of XP-, IR-, and energy-dispersive spectroscopy

Н. И. Файнер, А. Г. Плеханов, Igor Asanov

Abstract

The element composition and chemical bonds of nanocomposite films of hydrogenated silicon oxycarbonitride fabricated through high-frequency plasma-chemical deposition from initial gas mixtures of 1,1,3,3-tetramethyldisilazane with nitrogen and oxygen in the temperature range 373–973 K depending on the synthesis conditions is studied. The effect of changes in the temperature and chemical composition of the initial gas mixtures on the element composition and types of chemical bonds in SiC x N y O z :H films is investigated.

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Key concepts: Chemical composition, Silicon, Chemical bond, Materials science, Oxygen, Nitrogen, Chemical vapor deposition, Analytical Chemistry (journal)