2017•Unpublished venueRequires access
A H-band double balanced passive down-conversion mixer in a 65 nm bulk CMOS
Guodong Su, Jincai Wen, Dirong Chen, Lingling Sun, Zonghua Zheng, Jiangtao Su, Yuchao Lei
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Abstract
This paper presents an H-band double balanced passive down-conversion mixer in a 65 nm bulk CMOS. A novel wide-band balun with low loss is proposed for the mixer in this work. This new wide-band balun realizes the input matching network and makes the mixer easier to achieve a wide RF bandwidth. The mixer core employs double balanced passive structure pump by a fundamental LO signal, leading to low conversion loss, high isolation and good linearity. The conversion loss of this mixer is less than 16.7 dB from 270 GHz to 290 GHz, while LO signal with 6 dBm operates at a frequency of 140 GHz, and the proposed mixer exhibits RF bandwidth of 20 GHz. The isolation of LO-to-RF and LO-to-IF are -69.3dB and -26.6 dB, respectively. The input 1-dB compress point is 0.57 dBm and the input 3rdorder interaction point is 12.8 dBm.