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Amorphization from quenched high-pressure phase in III-V compounds

Kazuhiko Tsuji, Yoshiyasu Yamamoto, Yoshinori Katayama, Naoe Koyama

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Abstract

X‐ray diffraction measurements for GaSb and AlSb have been made at various pressures up to 13 GPa and temperatures down to 100 K using synchrotron radiation. Pressure‐induced phase transitions and amorphizations were observed. The behavior of phase transitions strongly depends on paths in a pressure‐temperature phase diagram. The high‐pressure phase was quenched on release of pressure at low temperature. Amorphization from the quenched high‐pressure phase occurred for GaSb when the temperature was increased at low pressures below 1 GPa and when pressure was decreased at low temperatures below 280 K. For AlSb, similar amorphizations were also observed at low pressures below 3 GPa and at low temperatures below 280 K. These results are discussed in connection with the pressure dependence of potential barriers for the phase transitions.

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X‐ray diffraction measurements for GaSb and AlSb have been made at various pressures up to 13 GPa and temperatures down to 100 K using synchrotron radiation. Pressure‐induced phase transitions and amorphizations were observed. The behavior of phase transitions strongly depends on paths in a pressure‐temperature phase diagram. The high‐pressure phase was quenched on release of pressure at low temperature. Amorphization from the quenched high‐pressure phase occurred for GaSb when the temperature was increased at low pressures below 1 GPa and when pressure was decreased at low temperatures below 280 K. For AlSb, similar amorphizations were also observed at low pressures below 3 GPa and at low temperatures below 280 K. These results are discussed in connection with the pressure dependence of potential barriers for the phase transitions.

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Available abstract

X‐ray diffraction measurements for GaSb and AlSb have been made at various pressures up to 13 GPa and temperatures down to 100 K using synchrotron radiation. Pressure‐induced phase transitions and amorphizations were observed. The behavior of phase transitions strongly depends on paths in a pressure‐temperature phase diagram. The high‐pressure phase was quenched on release of pressure at low temperature. Amorphization from the quenched high‐pressure phase occurred for GaSb when the temperature was increased at low pressures below 1 GPa and when pressure was decreased at low temperatures below 280 K. For AlSb, similar amorphizations were also observed at low pressures below 3 GPa and at low temperatures below 280 K. These results are discussed in connection with the pressure dependence of potential barriers for the phase transitions.

Key concepts: Materials science, Diffraction, Phase (matter), Phase diagram, Synchrotron radiation, High pressure, Phase transition, Synchrotron

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