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2004•International Journal of High Speed Electronics and SystemsRequires access

ATOMICALLY FLAT III-ANTIMONIDE EPILAYERS GROWN USING LIQUID PHASE EPITAXY

ANIKA KUMAR, SUJATHA SRIDARAN, P.S. Dutta

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Abstract

A novel process has been developed which allows the growth of device grade ultra-smooth epitaxial layers of antimonide based III-V compounds with a controlled thickness using Liquid Phase Epitaxy (LPE). GaSb epilayers (with thickness in the range of 20-50 m) on GaSb single crystalline substrates have been grown with a root mean square surface roughness of less than 1 nm over an area of 5 §←5 m .

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What this paper is about

A novel process has been developed which allows the growth of device grade ultra-smooth epitaxial layers of antimonide based III-V compounds with a controlled thickness using Liquid Phase Epitaxy (LPE). GaSb epilayers (with thickness in the range of 20-50 m) on GaSb single crystalline substrates have been grown with a root mean square surface roughness of less than 1 nm over an area of 5 §←5 m .

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Available abstract

A novel process has been developed which allows the growth of device grade ultra-smooth epitaxial layers of antimonide based III-V compounds with a controlled thickness using Liquid Phase Epitaxy (LPE). GaSb epilayers (with thickness in the range of 20-50 m) on GaSb single crystalline substrates have been grown with a root mean square surface roughness of less than 1 nm over an area of 5 §←5 m .

Key concepts: Antimonide, Epitaxy, Materials science, Gallium antimonide, Liquid phase, Optoelectronics, Surface finish, Phase (matter)

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