Base Doping Effects on the Efficiency of Vertical Parallel Junction Solar Cells
Almoustapha Samoura, O. Sakho, Omar Faye, A.C. Beye
Abstract
Open-access reader
Almoustapha Samoura, O. Sakho, Omar Faye, A.C. Beye
Abstract
Open-access reader
In this work, we present a theoretical study of a vertical parallel junction silicon solar cell under monochromatic illumination. The internal quantum efficiency (IQE) and the photovoltaic conversion efficiency are calculated, taking into account the base doping density and illumination wave-length. The main purpose of this work is to show how conversion efficiency depends on internal quantum efficiency and the dependence of the later on the base doping density.
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In this work, we present a theoretical study of a vertical parallel junction silicon solar cell under monochromatic illumination. The internal quantum efficiency (IQE) and the photovoltaic conversion efficiency are calculated, taking into account the base doping density and illumination wave-length. The main purpose of this work is to show how conversion efficiency depends on internal quantum efficiency and the dependence of the later on the base doping density.
Key concepts: Quantum efficiency, Doping, Energy conversion efficiency, Monochromatic color, Solar cell efficiency, Optoelectronics, Materials science, Base (topology)