Nonlinearity Measurement and Analysis of 0.25 ?m

Linear and nonlinear characteristics of 0.25 ?mAlGaN/GaN HEMT grown on SiC substrate have been studied asa function of biasing, input power, frequency and temperatureusing a two-tone intermodulation distortion measurementtechnique for the first time. The results indicate a significantmodification on the output IMD power. An empirical analyticalmodel has been developed and good agreement was shownbetween the measured data with the simulation results. Theanalysis of GaN HEMT presented can be utilized forperformance enhancement of the design optimization ofadvanced GaN based MMIC?s operating at high temperature.