2017•Unpublished venueRequires access

GaN-Based Blue and Green Laser Diodes

Jianping Liu, Hui Yang

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Abstract

We describe our studies on GaN-based laser diodes, including homoepitaxial growth of GaN layers on GaN substrates, laser diode layer structure design and doping optimization, epitaxial growth of InGaN quantum wells, and suppression of unintentional carbon incorporation in AlGaN:Mg to improve its conductivity. Based on these studies, we have demonstrated both blue laser diodes with output power of 1.3 W and green laser diodes with output power of 60 mW under continuous wave operation.

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What this paper is about

We describe our studies on GaN-based laser diodes, including homoepitaxial growth of GaN layers on GaN substrates, laser diode layer structure design and doping optimization, epitaxial growth of InGaN quantum wells, and suppression of unintentional carbon incorporation in AlGaN:Mg to improve its conductivity. Based on these studies, we have demonstrated both blue laser diodes with output power of 1.3 W and green laser diodes with output power of 60 mW under continuous wave operation.

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Available abstract

We describe our studies on GaN-based laser diodes, including homoepitaxial growth of GaN layers on GaN substrates, laser diode layer structure design and doping optimization, epitaxial growth of InGaN quantum wells, and suppression of unintentional carbon incorporation in AlGaN:Mg to improve its conductivity. Based on these studies, we have demonstrated both blue laser diodes with output power of 1.3 W and green laser diodes with output power of 60 mW under continuous wave operation.

Key concepts: Green laser, Optoelectronics, Materials science, Laser, Blue laser, Diode, Optics, Physics

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