GaN-Based Blue and Green Laser Diodes
Jianping Liu, Hui Yang
Abstract
Jianping Liu, Hui Yang
Abstract
We describe our studies on GaN-based laser diodes, including homoepitaxial growth of GaN layers on GaN substrates, laser diode layer structure design and doping optimization, epitaxial growth of InGaN quantum wells, and suppression of unintentional carbon incorporation in AlGaN:Mg to improve its conductivity. Based on these studies, we have demonstrated both blue laser diodes with output power of 1.3 W and green laser diodes with output power of 60 mW under continuous wave operation.
A significance statement is not available in the OpenAlex record.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
We describe our studies on GaN-based laser diodes, including homoepitaxial growth of GaN layers on GaN substrates, laser diode layer structure design and doping optimization, epitaxial growth of InGaN quantum wells, and suppression of unintentional carbon incorporation in AlGaN:Mg to improve its conductivity. Based on these studies, we have demonstrated both blue laser diodes with output power of 1.3 W and green laser diodes with output power of 60 mW under continuous wave operation.
Key concepts: Green laser, Optoelectronics, Materials science, Laser, Blue laser, Diode, Optics, Physics