Transport and magnetic properties of Co-doped BaFe_{2}As_{2} epitaxial thin films
Shyam Mohan, Toshihiro Taen, Hidenori Yagyuda, Yasuyuki Nakajima, T. Tamegai, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono
Abstract
Shyam Mohan, Toshihiro Taen, Hidenori Yagyuda, Yasuyuki Nakajima, T. Tamegai, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono
Abstract
We report resistivity, Hall coefficient, current-voltage characteristics, and magneto-optical imaging measurements of epitaxial Co-doped BaFe_{2}As_{2} thin films deposited on MgO(001) substrate. The Hall resistivity of the films has a substantial contribution arising from anomalous Hall effect of ferromagnetic components. The critical current density (J_{c}) of the films is ~2 MA/cm^{2} at low temperatures. Differential magneto-optical images of the remanent state give similar J_{c} values and also exhibit presence of extended defects in the film.
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We report resistivity, Hall coefficient, current-voltage characteristics, and magneto-optical imaging measurements of epitaxial Co-doped BaFe_{2}As_{2} thin films deposited on MgO(001) substrate. The Hall resistivity of the films has a substantial contribution arising from anomalous Hall effect of ferromagnetic components. The critical current density (J_{c}) of the films is ~2 MA/cm^{2} at low temperatures. Differential magneto-optical images of the remanent state give similar J_{c} values and also exhibit presence of extended defects in the film.
Key concepts: Doping, Epitaxy, Thin film, Materials science, Optoelectronics, Nanotechnology, Layer (electronics)