1987•OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)Requires access
Noise characteristics of silicon thin-film resistors
S.V. Belogurov, V. Gostilo, A.S. Yurov
Open publisher page 0 citations
Abstract
The results of studies of the spectral density and energy equivalent of the noise of thin-film resistors based on amorphous silicon and of stock high-value KIM and KVM resistors are reported. It is shown that the main source of excess resistor noise is dependence of the resistive component of impedance on frequency. The dependence of the spectral density of the noise voltage of the current noise of silicon resistors on the applied voltage is described by the formula S/sub c/ = Bv/sup 2//f/sup 1,6/ with B = (1.4-1.7) x 10/sup -12/ Hz/sup 0.6/. Silicon resistors have considerably better noise characteristics than do stock resistors.