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Design and fabrication of high-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors

Michael T. Fresina

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Key concepts: Gallium arsenide, Indium phosphide, Optoelectronics, Materials science, Heterojunction bipolar transistor, Fabrication, Heterojunction, Bipolar junction transistor

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Design and fabrication of high-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors — Research Paper | ScholarLens