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High Aspect Ratio (~25:1) Sub-10 Nm HSQ Lines Using Electron Beam Lithography

Muhammad Mirza, Haiping Zhou, Kevin E. Docherty, S. Thoms, D.S. Macintyre, Douglas J. Paul

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Abstract

This paper reports the challenging work in producing ultra high aspect ratio ~25:1 sub-10 nm HSQ lines using 250 nm thick HSQ resist, which is successfully used as the etch mask and provides the flexibility for high resolution pattern transfer.

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What this paper is about

This paper reports the challenging work in producing ultra high aspect ratio ~25:1 sub-10 nm HSQ lines using 250 nm thick HSQ resist, which is successfully used as the etch mask and provides the flexibility for high resolution pattern transfer.

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Available abstract

This paper reports the challenging work in producing ultra high aspect ratio ~25:1 sub-10 nm HSQ lines using 250 nm thick HSQ resist, which is successfully used as the etch mask and provides the flexibility for high resolution pattern transfer.

Key concepts: Electron-beam lithography, Resist, Materials science, Lithography, Next-generation lithography, Optoelectronics, Aspect ratio (aeronautics), Stencil lithography

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