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MOCVD Growth and Characteristics of GaN-Based Nanowires and Their Heterostructures

Yirui Li

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Key concepts: Metalorganic vapour phase epitaxy, Nanowire, Heterojunction, Materials science, Optoelectronics, Gallium nitride, Nanotechnology, Engineering physics

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MOCVD Growth and Characteristics of GaN-Based Nanowires and Their Heterostructures — Research Paper | ScholarLens