Transfer characteristics of pulsed phototransistor structures

It has been shown that phototransistors operated in a pulsed mode display a light integration characteristic that provides enhanced light sensitivity over a wide range of conditions. The purpose of this paper is to present the results of measurements of storage-mode sensing performed on silicon phototransistors of several geometries as functions of integration period, sampling pulse amplitude, ambient temperature, and light level. Some experimental results; will be compared to the theoretically predicted performance using a phototransistor model developed for the pulsed phototransistor, and conclusions drawn.