Ultra-high coulomb energy in position controlled grown carbon nanotube
Kazuhiko Matsumoto
Abstract
Kazuhiko Matsumoto
Abstract
A carbon nanotube is one of the best candidates for the nano-scale devices because of its small features. The problem of the carbon nanotube is the difficulty how to control the position and the direction of the carbon nanotube. So far, the carbon nanotube was dispersed in to the alcohol and distributed onto the substrate, and was connected to the metal electrode by moving the carbon nanotube by AFM cantilever to the electrode. This process took a lot of time and showed low yield. In order to solve this problem, we proposed the new technology that could control the position of the carbon nanotube by using the patterned chemical catalyst. The three terminal device which used the carbon nanotube as a channel was fabricated and its electrical properties were examined. The carbon nanotube three terminal device showed the single electron transistor characteristics and showed the room temperature Coulomb diamond characteristics. The Coulomb temperature of the device is as high as approximately 5000 K.
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A carbon nanotube is one of the best candidates for the nano-scale devices because of its small features. The problem of the carbon nanotube is the difficulty how to control the position and the direction of the carbon nanotube. So far, the carbon nanotube was dispersed in to the alcohol and distributed onto the substrate, and was connected to the metal electrode by moving the carbon nanotube by AFM cantilever to the electrode. This process took a lot of time and showed low yield. In order to solve this problem, we proposed the new technology that could control the position of the carbon nanotube by using the patterned chemical catalyst. The three terminal device which used the carbon nanotube as a channel was fabricated and its electrical properties were examined. The carbon nanotube three terminal device showed the single electron transistor characteristics and showed the room temperature Coulomb diamond characteristics. The Coulomb temperature of the device is as high as approximately 5000 K.
Key concepts: Carbon nanotube, Carbon nanotube field-effect transistor, Nanotube, Materials science, Carbon nanotube quantum dot, Nanotechnology, Electrode, Carbon fibers