Minimization of self-heating in SOI MOSFET devices with SELBOX structure

The SOI MOSFET devices offer excellent performance advantages over bulk MOSFET devices. The structural features of the SOI MOSFET devices introduce several undesirable effects which are not normally present in the bulk MOSFET devices such as kink effect and self-heating effect. The work in this paper is focused on minimizing the self-heating in the SOI MOSFET device with the use of back oxide at selected regions below source and drain instead of continuously as in SOI MOSFET devices. TCAD simulation results shows that the modified structure is effective in minimizing the self-heating in the SOI devices. It is observed that through proper selection of gap parameters the self-heating in the device can be controlled.