Comparative study of temperature sensitive electrical parameters (TSEP) of Si, SiC and GaN power devices

For high power applications, power modules provide a higher power density than using discrete power devices due to improved thermal performance as well as compact form factor. Since all semiconductor failure and degradation is related to the temperature rise in semiconductor devices, accurate temperature monitoring is necessary and are considered necessary in future generations of wide bandgap power modules. In this paper, a comparative temperature sensitive electrical parameter study is conducted for Si, SiC and GaN power devices. The results can be used in choosing the most sensitive electrical parameter for online junction temperature sensing.