ScholarLens Back to search
2016•Unpublished venueRequires access

Wideband 3 way Doherty RFIC with 12 dB back-off power range

I. Blednov

Open publisher page 4 citations

Abstract

This work presents a study results of 3 Way Doherty amplifier (3WDPA) using LDMOS RFIC technology resulting in PAE=(45...55)% at 12 dB back-off power level with uniform AM-PM characteristics over (1.8...2.2)GHz frequency band. RFIC of (5×3) mm size allows Pmax > 47dB, suitable for Small Cell Mobile BTS. Demonstrator proves that proposed 3WDPA design approach enables low cost integrated LDMOS wideband DPA with high Eff and linearity at >12dB Back-Off, which close to the performance demonstrated by 3WDPA using GaN technology with digital mixed signal control.

About this research paper

What this paper is about

This work presents a study results of 3 Way Doherty amplifier (3WDPA) using LDMOS RFIC technology resulting in PAE=(45...55)% at 12 dB back-off power level with uniform AM-PM characteristics over (1.8...2.2)GHz frequency band. RFIC of (5×3) mm size allows Pmax > 47dB, suitable for Small Cell Mobile BTS. Demonstrator proves that proposed 3WDPA design approach enables low cost integrated LDMOS wideband DPA with high Eff and linearity at >12dB Back-Off, which close to the performance demonstrated by 3WDPA using GaN technology with digital mixed signal control.

Why it matters

OpenAlex reports 4 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

This work presents a study results of 3 Way Doherty amplifier (3WDPA) using LDMOS RFIC technology resulting in PAE=(45...55)% at 12 dB back-off power level with uniform AM-PM characteristics over (1.8...2.2)GHz frequency band. RFIC of (5×3) mm size allows Pmax > 47dB, suitable for Small Cell Mobile BTS. Demonstrator proves that proposed 3WDPA design approach enables low cost integrated LDMOS wideband DPA with high Eff and linearity at >12dB Back-Off, which close to the performance demonstrated by 3WDPA using GaN technology with digital mixed signal control.

Key concepts: RFIC, LDMOS, Wideband, Electrical engineering, Amplifier, Linearity, Electronic engineering, Power (physics)

Related papers

Related paper 1Related paper 2
Back to paper searchBrowse research topicsOriginal source
Wideband 3 way Doherty RFIC with 12 dB back-off power range — Research Paper | ScholarLens