1982Physics BulletinOpen access

Defects and Radiation Effects in Semiconductors 1980: Conference Series 59

P.D. Scovell

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Abstract

R R Hasiguti (ed) 1981 Bristol: The Institute of Physics xiv + 571 pp price £39 (IOP members' price £29.25) This book contains the proceedings of the 1980 conference on defects and radiation effects in semiconductors held at Oiso, Japan, in September 1980. It deals with group IV elemental semiconductors, together with the III–V and II–VI compound semiconductors.

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R R Hasiguti (ed) 1981 Bristol: The Institute of Physics xiv + 571 pp price £39 (IOP members' price £29.25) This book contains the proceedings of the 1980 conference on defects and radiation effects in semiconductors held at Oiso, Japan, in September 1980. It deals with group IV elemental semiconductors, together with the III–V and II–VI compound semiconductors.

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R R Hasiguti (ed) 1981 Bristol: The Institute of Physics xiv + 571 pp price £39 (IOP members' price £29.25) This book contains the proceedings of the 1980 conference on defects and radiation effects in semiconductors held at Oiso, Japan, in September 1980. It deals with group IV elemental semiconductors, together with the III–V and II–VI compound semiconductors.

Key concepts: Series (stratigraphy), Engineering physics, Semiconductor, Radiation, Physics, Nuclear physics, Optoelectronics, Biology

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