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2003•Unpublished venueRequires access

48 GHz AlInAs/GaInAs heterojunction bipolar transistors

Umesh K. Mishra, J.F. Jensen, D.B. Rensch, April S. Brown, M.W. Pierce, L.G. McCray, T.V. Kargodorian, W. Hoefer, R.E. Kastris

Open publisher page 11 citations

Abstract

The authors report on the DC and RF performance of self-aligned Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors (HBTs). The properties that make the AlInAs/GaInAs material system extremely attractive for HBTs are discussed The epitaxial layer structure was grown by molecular beam epitaxy on semi-insulating InP. The device structure is shown in cross section. A large variety of HBT devices with different emitter sizes and with different numbers of emitter fingers have been fabricated. The common emitter characteristics of a single 5- mu m*5 mu m emitter are reported.>

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What this paper is about

The authors report on the DC and RF performance of self-aligned Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors (HBTs). The properties that make the AlInAs/GaInAs material system extremely attractive for HBTs are discussed The epitaxial layer structure was grown by molecular beam epitaxy on semi-insulating InP. The device structure is shown in cross section. A large variety of HBT devices with different emitter sizes and with different numbers of emitter fingers have been fabricated. The common emitter characteristics of a single 5- mu m*5 mu m emitter are reported.>

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OpenAlex reports 11 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

The authors report on the DC and RF performance of self-aligned Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors (HBTs). The properties that make the AlInAs/GaInAs material system extremely attractive for HBTs are discussed The epitaxial layer structure was grown by molecular beam epitaxy on semi-insulating InP. The device structure is shown in cross section. A large variety of HBT devices with different emitter sizes and with different numbers of emitter fingers have been fabricated. The common emitter characteristics of a single 5- mu m*5 mu m emitter are reported.>

Key concepts: Heterojunction bipolar transistor, Common emitter, Bipolar junction transistor, Heterojunction, Optoelectronics, Materials science, Molecular beam epitaxy, Heterostructure-emitter bipolar transistor

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