Optoelectronic integrated circuit grown on Si using selective regrowth by MOCVD

The authors report the first fabrication of a monolithically integrated AlGaAs/GaAs laser and GaAs MESFET grown on a GaAs/Si substrate using selective regrowth by MOCVD (metal-organic chemical vapor deposition). The schematic cross-sectional structure of monolithic integration of AlGaAs/GaAs laser and GaAs MESFET on a GaAs/Si substrate grown at 750 degrees C by MOCVD is shown. The drain I-V characteristic of the selective-regrown MESFET is also shown together with the drain I-V characteristic of the MESFET which is connected in series with the laser. This new type of OEIC (optoelectronic integrated circuit) is very promising in future applications such as optical interconnection.>