A Simple Method to Extract the Parasitic Resistances from a Single MOSFET using Measurements of Small-Signal Conductances

In this paper, we present a new and simple method to extract the source (R S ) and drain (R D ) parasitic resistances of a MOSFET separately, using small-signal transconductance (g m ) and drain conductance (g d ) measurements on a single MOSFET. Unlike most earlier methods that depend on the measurements of the d.c. resistances of several MOSFETs, our method can be directly applied to situations involving the early-mode hot-carrier degradation where the source and drain resistances differ due to stressing, and asymmetrical layouts or processing of source and drain sides. The method yields reasonably accurate values of R S and R D when compared with a conventional method. The error terms are also discussed.