ScholarLens Back to search
2002•Unpublished venueRequires access

Analysis of dynamic characteristics in a-Si TFT structures (for active-matrix LCD)

T. Kitazawa, Makoto Shibusawa, Toshiharu Higuchi

Open publisher page 2 citations

Abstract

Active-matrix LCDs (liquid crystal displays) addressed by a-Si (amorphous silicon) TFTs (thin-film transistors) are being developed for graphic displays such as computer terminals. Three types of TFTs, a back-channel-etched TFT, a trilayered TFT, and a self-aligned TFT, have been developed. The authors describe the dynamic characteristics of these TFTs, especially level shift in pixel voltage. First, the dependence of the level shift voltage both on drain voltage and on gate pulse delay is demonstrated. The difference of the level shift caused by the TFT structure is then clarified. Then these results are compared to those of SPICE simulation.>

About this research paper

What this paper is about

Active-matrix LCDs (liquid crystal displays) addressed by a-Si (amorphous silicon) TFTs (thin-film transistors) are being developed for graphic displays such as computer terminals. Three types of TFTs, a back-channel-etched TFT, a trilayered TFT, and a self-aligned TFT, have been developed. The authors describe the dynamic characteristics of these TFTs, especially level shift in pixel voltage. First, the dependence of the level shift voltage both on drain voltage and on gate pulse delay is demonstrated. The difference of the level shift caused by the TFT structure is then clarified. Then these results are compared to those of SPICE simulation.>

Why it matters

OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Active-matrix LCDs (liquid crystal displays) addressed by a-Si (amorphous silicon) TFTs (thin-film transistors) are being developed for graphic displays such as computer terminals. Three types of TFTs, a back-channel-etched TFT, a trilayered TFT, and a self-aligned TFT, have been developed. The authors describe the dynamic characteristics of these TFTs, especially level shift in pixel voltage. First, the dependence of the level shift voltage both on drain voltage and on gate pulse delay is demonstrated. The difference of the level shift caused by the TFT structure is then clarified. Then these results are compared to those of SPICE simulation.>

Key concepts: Thin-film transistor, Active matrix, Liquid-crystal display, Transistor, Threshold voltage, Optoelectronics, Materials science, Oxide thin-film transistor

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Analysis of dynamic characteristics in a-Si TFT structures (for active-matrix LCD) — Research Paper | ScholarLens