2004Unpublished venueRequires access

A 3-D wafer level hermetical packaging for MEMS

Yi Jin, Jun Wei, Guo-Jun Qi, Z.F. Wang, P. C. Lim, C.K. Wong

Open publisher page 1 citations

Abstract

In this paper, a 3D wafer-level hermetical packaging solution for micro-electromechanical-system (MEMS) is presented. The MEMS wafer is sandwiched between a top glass wafer and a bottom Si substrate wafer. With the assistance of a gold intermediate layer, the bottom Si wafer is hermetically sealed to the MEMS wafer with 3D electric feed-through connecting the metal pads on MEMS wafer with solder balls or bonding pads on bottom wafer for flip chip process. The bond strength is higher than 5 MPa.

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What this paper is about

In this paper, a 3D wafer-level hermetical packaging solution for micro-electromechanical-system (MEMS) is presented. The MEMS wafer is sandwiched between a top glass wafer and a bottom Si substrate wafer. With the assistance of a gold intermediate layer, the bottom Si wafer is hermetically sealed to the MEMS wafer with 3D electric feed-through connecting the metal pads on MEMS wafer with solder balls or bonding pads on bottom wafer for flip chip process. The bond strength is higher than 5 MPa.

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Available abstract

In this paper, a 3D wafer-level hermetical packaging solution for micro-electromechanical-system (MEMS) is presented. The MEMS wafer is sandwiched between a top glass wafer and a bottom Si substrate wafer. With the assistance of a gold intermediate layer, the bottom Si wafer is hermetically sealed to the MEMS wafer with 3D electric feed-through connecting the metal pads on MEMS wafer with solder balls or bonding pads on bottom wafer for flip chip process. The bond strength is higher than 5 MPa.

Key concepts: Wafer, Die preparation, Microelectromechanical systems, Wafer backgrinding, Wafer testing, Wafer bonding, Materials science, Wafer-level packaging

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