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Wafer surface treatment for integrating laser diode and optical isolator by direct bonding

Tetsuya Mizumoto, H. Yokoi, Mitsuaki Shimizu, Takashi Waniishi, N. Futakuchi, N. Kaida, Yoshiaki Nakano

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Abstract

GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding. Wafer direct bonding was successfully achieved between O/sub 2/ plasma activated GaInAsP and garnet crystals.

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What this paper is about

GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding. Wafer direct bonding was successfully achieved between O/sub 2/ plasma activated GaInAsP and garnet crystals.

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Available abstract

GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding. Wafer direct bonding was successfully achieved between O/sub 2/ plasma activated GaInAsP and garnet crystals.

Key concepts: Wafer, Wafer bonding, Materials science, Direct bonding, Optical isolator, Optoelectronics, Laser, Laser diode

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