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2003•10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988.Requires access

Complementary GaAs JFET 16 K SRAM

C. H. Vogelsang, Juan Antonio García Castro, JOHANNES K. NOTTHOFF, G. L. Troeger, J. S. Stephens, R. B. Krein

Open publisher page 7 citations

Abstract

A complementary GaAs JFET 16 K SRAM (static random-access memory) with a 4 K*4 organization has been designed, fabricated, and tested. Full functionality of this device has been verified with the GALPAT and marching surround-by-complement patterns. With the surround-by-complement pattern, a worst bit read access time of 22.5 ns has been measured with an average bit access time of 16.1 ns at 678-mW total power dissipation at room temperature. A wafer probe yield of 3% has been obtained.>

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What this paper is about

A complementary GaAs JFET 16 K SRAM (static random-access memory) with a 4 K*4 organization has been designed, fabricated, and tested. Full functionality of this device has been verified with the GALPAT and marching surround-by-complement patterns. With the surround-by-complement pattern, a worst bit read access time of 22.5 ns has been measured with an average bit access time of 16.1 ns at 678-mW total power dissipation at room temperature. A wafer probe yield of 3% has been obtained.>

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OpenAlex reports 7 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A complementary GaAs JFET 16 K SRAM (static random-access memory) with a 4 K*4 organization has been designed, fabricated, and tested. Full functionality of this device has been verified with the GALPAT and marching surround-by-complement patterns. With the surround-by-complement pattern, a worst bit read access time of 22.5 ns has been measured with an average bit access time of 16.1 ns at 678-mW total power dissipation at room temperature. A wafer probe yield of 3% has been obtained.>

Key concepts: Static random-access memory, Complement (music), JFET, Computer science, Yield (engineering), Wafer, Dissipation, Embedded system

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