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Single electron charging effect in coupled quantum dots of a Si-MOSFET

Matsuoka, Ichiguchi, Yoshimura, 『 Takeda

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Abstract

Single electron transport was studied by using a designed mesoscopic structure in a Si-MOSFET with a dual-gate structure. Both the electron concentration and the potential barrier height in the narrow channel can be controlled by the field effect. The successive transformation of the quantum wire into coupled quantum dots was achieved in this device. The measured transport properties were consistent with the Coulomb blockade of the single electron tunneling.>

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What this paper is about

Single electron transport was studied by using a designed mesoscopic structure in a Si-MOSFET with a dual-gate structure. Both the electron concentration and the potential barrier height in the narrow channel can be controlled by the field effect. The successive transformation of the quantum wire into coupled quantum dots was achieved in this device. The measured transport properties were consistent with the Coulomb blockade of the single electron tunneling.>

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OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Single electron transport was studied by using a designed mesoscopic structure in a Si-MOSFET with a dual-gate structure. Both the electron concentration and the potential barrier height in the narrow channel can be controlled by the field effect. The successive transformation of the quantum wire into coupled quantum dots was achieved in this device. The measured transport properties were consistent with the Coulomb blockade of the single electron tunneling.>

Key concepts: Mesoscopic physics, Coulomb blockade, MOSFET, Quantum dot, Quantum tunnelling, Electron, Condensed matter physics, Field-effect transistor

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