2012•Unpublished venueRequires access

Resistive switching in high-k dielectrics for non-volatile memory applications

R. G. Elliman, M. N. Saleh, Dinesh Kumar Venkatachalam, Tae Hee Kim, Kidane Belay, Fouad Karouta

Abstract

We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.

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Key concepts: Resistive random-access memory, Non-volatile memory, Materials science, Resistive touchscreen, Dielectric, Random access memory, Optoelectronics, Data retention