2005•Unpublished venueRequires access

Defect engineering in silicon used for ultra large-scale integrated circuits

Deren Yang, Xuegong Yu, Xiangyang Ma, Duanlin Que

Abstract

The internal gettering (IG) technology in Czochralski (CZ) silicon doped with different impurities (nitrogen, germanium and high concentration boron) have been investigated in the paper. It was found that the denuded zone (DZ) could be formed at the near-surface of the CZ silicon doped with these impurities by hi-lo-hi three-step annealing, even high temperature single-step annealing. Meanwhile, dense bulk microdefects (BMD) generated in the bulk of these wafers enabled strong capability of gettering detrimental metal impurities on the silicon wafer. In addition, the formation mechanism of the DZ and the BMD region in the CZ silicon doped with these impurities has been discussed.

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Available abstract

Key concepts: Getter, Silicon, Impurity, Wafer, Materials science, Annealing (glass), Boron, Doping