2016•Microelectronics ReliabilityOpen access

Comparison of thermal runaway limits under different test conditions based on a 4.5kV IGBT

Paula Diaz Reigosa, D. Prindle, Gontran Pâques, Silvan Geissmann, Francesco Iannuzzo, A. Kopta, Munaf T. A. Rahimo

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Key concepts: Thermal runaway, Junction temperature, Safe operating area, Insulated-gate bipolar transistor, Leakage (economics), Operating temperature, Thermal, Reliability engineering

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Comparison of thermal runaway limits under different test conditions based on a 4.5kV IGBT — Research Paper | ScholarLens