Electrical Properties of TiO2 Thin Film Prepared by Sol-Gel Method

TiO2 thin film was prepared by sol-gel method using a metal alkoxide [Ti(O-i-Pr)4 tetra isopropoxisi titanium; TIPT]. The crystalline form of the film is changed by the condition for preparing sol and heat treatment temperature. When the ratio (γ) of H2O to TIPT is 7, the crystalline phase is found at 400°C. On the other hand, for γ=2 it is found at 500°C. The crystalline form was anatase for both γ=2 and γ=7. It was found that the electrical conductivity of TiO2 film increased with increasing the heat treatment temperature.