2011Unpublished venueRequires access

Studies on nanocrystalline ZnS thin films prepared by modified chemical bath deposition method

Mahendra S. Shinde, Prakash B. Ahirrao, I. J. Patil, Rupali S. Patil

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Abstract

Nanocrystalline zinc sulphide (ZnS) thin films have been grown on glass surface by modified chemical bath deposition method (M-CBD). The optimized preparative parameters including temperature, pH of solution, immersion time, immersion cycles, have been optimized for fine nanocrystalline film growth. As deposited nanocrystalline zinc sulphide (ZnS) thin films have been characterized for the structural, optical and electrical properties using X-ray diffraction (XRD), UV-Vis spectra and dc electrical conductivity by two point probe method.

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What this paper is about

Nanocrystalline zinc sulphide (ZnS) thin films have been grown on glass surface by modified chemical bath deposition method (M-CBD). The optimized preparative parameters including temperature, pH of solution, immersion time, immersion cycles, have been optimized for fine nanocrystalline film growth. As deposited nanocrystalline zinc sulphide (ZnS) thin films have been characterized for the structural, optical and electrical properties using X-ray diffraction (XRD), UV-Vis spectra and dc electrical conductivity by two point probe method.

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Available abstract

Nanocrystalline zinc sulphide (ZnS) thin films have been grown on glass surface by modified chemical bath deposition method (M-CBD). The optimized preparative parameters including temperature, pH of solution, immersion time, immersion cycles, have been optimized for fine nanocrystalline film growth. As deposited nanocrystalline zinc sulphide (ZnS) thin films have been characterized for the structural, optical and electrical properties using X-ray diffraction (XRD), UV-Vis spectra and dc electrical conductivity by two point probe method.

Key concepts: Nanocrystalline material, Chemical bath deposition, Thin film, Zinc, Materials science, Deposition (geology), Conductivity, Chemical engineering

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