1994•OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)Requires access
Fabrication and evaluation of room temperature operated radiation detectors processed from undoped LEC bulk gallium arsenide material
Douglas S. McGregor, G.F. Knoll, Y. Eisen, R.J. Brake
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Abstract
Semi-insulating undoped bulk LEC GaAs was investigated as a possible detector material for room temperature operated charged particle and gamma ray spectrometers. GaAs Schottky based diode detectors were fabricated with thicknesses of 45 microns, 100 microns, 250 microns, and 750 microns. Pulse height analysis utilizing an alpha particle source disclosed non-constant electric field distributions that decreased rapidly from the Schottky contact into the bulk of the detectors. Results from pulsed X-ray analysis and the alpha particle pulse height analysis indicate an active region width voltage dependence that strongly deviates from {radical}{bar V} behavior. Resolution at room temperature for {sup 241}Am alpha particles ranged from 2.2% to 3.1% FWHM for different detectors with a typical resolution of 2.5% FWHM. Room temperature measurements of 60 keV gamma rays ({sup 24l}Am) and 122 keV gamma rays ({sup 57}Co) resulted in observed full energy peaks with FWHM`s of 22 keV and 40 keV, respectively.