Single-electron effects
Tero T. Heikkilä
Abstract
Tero T. Heikkilä
Abstract
This chapter discusses the phenomenon of Coulomb blockade, which takes place in small junctions. It first explains conditions of observing Coulomb blockade in single- or multiple junction systems and then details the orthodox theory of single-electron tunnelling, which consists of calculating the tunnelling rates and using them in a master equation for the charge states. This theory allows understanding of the properties of a single-electron transistor. The higher-order cotunneling is explained briefly. The phenomenon of dynamical Coulomb blockade arising in single junctions placed in high-resistance environments is discussed in detail. The chapter closes by describing main single-electron devices besides the conventional single-electron transistor: Coulomb blockade thermometer, radio frequency single-electron transistor, and a single electron pump.
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This chapter discusses the phenomenon of Coulomb blockade, which takes place in small junctions. It first explains conditions of observing Coulomb blockade in single- or multiple junction systems and then details the orthodox theory of single-electron tunnelling, which consists of calculating the tunnelling rates and using them in a master equation for the charge states. This theory allows understanding of the properties of a single-electron transistor. The higher-order cotunneling is explained briefly. The phenomenon of dynamical Coulomb blockade arising in single junctions placed in high-resistance environments is discussed in detail. The chapter closes by describing main single-electron devices besides the conventional single-electron transistor: Coulomb blockade thermometer, radio frequency single-electron transistor, and a single electron pump.
Key concepts: Coulomb blockade, Quantum tunnelling, Electron, Transistor, Coulomb, Blockade, Condensed matter physics, Physics